在euv光刻制程期间使用的euv掩膜

EUV mask for use during EUV photolithography processes

Abstract

The present disclosure is directed to various masks for use during EUV photolithography processes. In one example, an EUV mask is disclosed that includes, among other things, a substrate, a multilayer stack comprised of a plurality of multilayer pairs of ruthenium and silicon formed above the substrate, wherein the mask is adapted to, when irradiated with EUV light, have an effective reflective plane that is positioned 32 nm or less below an uppermost surface of the multilayer stack and a capping layer positioned above the uppermost surface of the multilayer stack.
本揭露涉及在EUV光刻制程期间使用的EUV掩膜。在一个例子中,所揭露的EUV掩膜包括:除其它以外,衬底;由形成于该衬底上方的钌和硅构成的多个多层对组成的多层堆栈,其中,当使用EUV光照射时,该掩膜适于具有有效反射平面,该有效反射平面位于该多层堆栈的最上层表面下方32纳米或更浅处;以及位于该多层堆栈的该最上层表面上方的覆盖层。

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Patent Citations (1)

    Publication numberPublication dateAssigneeTitle
    CN-102770806-ANovember 07, 2012卡尔蔡司Smt有限责任公司Reflective mask for EUV lithography

NO-Patent Citations (1)

    Title
    MIHIRO YANAGIHARA等: "In situ performance tests of soft-x-ray multilayer mirrors exposed to synchrotron radiation from a bending magnet", 《APPLIED OPTICS》

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