图案形成方法、光化射线敏感或放射线敏感树脂组合物、抗蚀剂膜、用于制造电子器件的方法,以及电子器件

Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device

Abstract

本发明的图案形成方法包括(i)使用光化射线敏感或放射线敏感树脂组合物形成膜,所述光化射线敏感或放射线敏感树脂组合物含有具有包含能够通过归因于酸的作用的分解而生成极性基团的基团的重复单元和包含羧基的重复单元的树脂(A),根据使用光化射线或放射线的照射生成酸的化合物(B),以及溶剂(C);(ii)使用KrF准分子激光、极紫外线或电子束将所述膜曝光;以及(iii)通过使用包含有机溶剂的显影液将已曝光的膜显影而形成阴图型色调图案。
The pattern forming method of the present invention includes (i) forming a film using an actinic ray-sensitive or radiation-sensitive resin composition which contains a resin (A) which has a repeating unit including a group capable of generating a polar group by being decomposed due to an action of an acid and a repeating unit including a carboxyl group, a compound (B) which generates an acid according to irradiation with actinic rays or radiation, and a solvent (C); (ii) exposing the film using a KrF excimer laser, extreme ultraviolet rays, or an electron beam; and (iii) forming a negative tonetone pattern by developing the exposed film using a developer which includes an organic solvent.

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Patent Citations (2)

    Publication numberPublication dateAssigneeTitle
    JP-2012133329-AJuly 12, 2012Fujifilm Corp, 富士フイルム株式会社Negative pattern forming method and resist pattern
    US-5738975-AApril 14, 1998Nec CorporationPhotosensitive resin and method for patterning by use of the same

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